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NX1029X,115
Dual MOSFET, Trench, Complementary N and P Channel, 60 V, 60 V, 330 mA, 330 mA, 1 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 50+ | S$0.116 (S$0.1264) |
| 250+ | S$0.091 (S$0.0992) |
| 1000+ | S$0.083 (S$0.0905) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
S$11.60 (S$12.64 inc GST)
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNX1029X,115
Order Code2575106RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id330mA
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)1ohm
Continuous Drain Current Id N Channel330mA
Continuous Drain Current Id P Channel330mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel1ohm
Drain Source On State Resistance P Channel1ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Transistor Case StyleSOT-666
Power Dissipation Pd330mW
No. of Pins6Pins
Power Dissipation N Channel330mW
Power Dissipation P Channel330mW
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
330mA
On Resistance Rds(on)
1ohm
Continuous Drain Current Id P Channel
330mA
Drain Source On State Resistance N Channel
1ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-666
No. of Pins
6Pins
Power Dissipation P Channel
330mW
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
330mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
1ohm
Gate Source Threshold Voltage Max
1.6V
Power Dissipation Pd
330mW
Power Dissipation N Channel
330mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00002