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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV45EN
Order Code1081483
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5.4A
Drain Source On State Resistance0.035ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation2W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for PMV45EN
3 Products Found
Product Overview
The PMV45EN is a N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed for high-speed switching and battery management.
- Logic-level compatible
- Very fast switching
Applications
Industrial, Computers & Computer Peripherals, Communications & Networking, Consumer Electronics
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.4A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.035ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033