MMZ09332BT1
High Efficiency/Linearity Amplifier, 130 MHz to 1 GHz, 30.5 dB Gain, 3 V to 5 V, HVQFN-12, 175 °C
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$10.260 (S$11.1834) |
| 10+ | S$8.890 (S$9.6901) |
| 25+ | S$8.420 (S$9.1778) |
| 50+ | S$8.100 (S$8.829) |
| 100+ | S$7.770 (S$8.4693) |
| 250+ | S$7.380 (S$8.0442) |
| 500+ | S$7.110 (S$7.7499) |
Product Information
Product Overview
MMZ09332BT1 is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of -50 dBc at an output power of up to 23dBm covering frequencies from 130 to 1000MHz. It operates from a supply voltage of 3 to 5V. The amplifier requires minimal external matching and offers state of the art reliability, ruggedness, temperature stability and ESD performance.
- Frequency range from 130 to 1000MHz
- P1dB is 33dBm, 450 to 1000MHz and OIP3 is up to 48dBm at 900MHz
- Excellent linearity
- Active bias control (adjustable externally)
- Single 3 to 5V supply
- Single ended power detector
- 1200mA total supply current
- 29dBm RF input power
- 12 lead HVQFN package
- 175°C junction temperature
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
130MHz
30.5dB
HVQFN
3V
-
-
MSL 1 - Unlimited
1GHz
-
12Pins
5V
175°C
-
No SVHC (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate