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2N5551BU.
Bipolar (BJT) Single Transistor, NPN, 160 V, 600 mA, 625 mW, TO-92, Through Hole
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part No2N5551BU.
Order Code2822520
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max160V
Continuous Collector Current600mA
Power Dissipation625mW
Transistor Case StyleTO-92
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency300MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for 2N5551BU.
2 Products Found
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
600mA
Transistor Case Style
TO-92
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
160V
Power Dissipation
625mW
Transistor Mounting
Through Hole
Transition Frequency
300MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000202