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2N5686G
Bipolar (BJT) Single Transistor, NPN, 80 V, 50 A, 300 W, TO-204AA, Through Hole
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158 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$14.090 (S$15.3581) |
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N5686G
Order Code2630288
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Continuous Collector Current50A
Power Dissipation300W
Transistor Case StyleTO-204AA
Transistor MountingThrough Hole
No. of Pins2Pins
Transition Frequency2MHz
DC Current Gain hFE Min15hFE
Operating Temperature Max200°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Product Overview
The 2N5686G is an NPN Complementary Silicon Power Transistor with designed for use in high-power amplifier and switching circuit applications.
Applications
Industrial
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
50A
Transistor Case Style
TO-204AA
No. of Pins
2Pins
DC Current Gain hFE Min
15hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
80V
Power Dissipation
300W
Transistor Mounting
Through Hole
Transition Frequency
2MHz
Operating Temperature Max
200°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (1)
Alternatives for 2N5686G
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.013835