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4N26M
Optocoupler, Transistor Output, 1 Channel, DIP, 6 Pins, 60 mA, 7.5 kV, 20 %
Image is for illustrative purposes only. Please refer to product description.
288 In Stock
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288 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$0.872 (S$0.9505) |
| 10+ | S$0.519 (S$0.5657) |
| 25+ | S$0.502 (S$0.5472) |
| 50+ | S$0.483 (S$0.5265) |
| 100+ | S$0.466 (S$0.5079) |
| 500+ | S$0.391 (S$0.4262) |
Price for:Each
Minimum: 1
Multiple: 1
S$0.87 (S$0.95 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Overview
The 4N26M is a 6-Pin general purpose Phototransistor Optocoupler consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor. It is suitable for digital logic inputs and microprocessor inputs.
- 850V Maximum working insulation voltage
- 6000V High allowable overvoltage
- -40 to +100°C Operating temperature range
- 20% Minimum current transfer ratio at IF=10mA, VCE=10V
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
No. of Channels
1 Channel
No. of Pins
6Pins
Isolation Voltage
7.5kV
Collector Emitter Voltage V(br)ceo
30V
SVHC
No SVHC (25-Jun-2025)
Optocoupler Case Style
DIP
Forward Current If Max
60mA
CTR Min
20%
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85414900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001052