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4N35M
Optocoupler, Transistor Output, 1 Channel, DIP, 6 Pins, 60 mA, 7.5 kV, 100 %
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$0.672 (S$0.7325) |
| 10+ | S$0.392 (S$0.4273) |
| 25+ | S$0.383 (S$0.4175) |
| 50+ | S$0.373 (S$0.4066) |
| 100+ | S$0.363 (S$0.3957) |
| 500+ | S$0.311 (S$0.339) |
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Product Information
ManufacturerONSEMI
Manufacturer Part No4N35M
Order Code1021351
Technical Datasheet
No. of Channels1 Channel
Optocoupler Case StyleDIP
No. of Pins6Pins
Forward Current If Max60mA
Isolation Voltage7.5kV
CTR Min100%
Collector Emitter Voltage V(br)ceo30V
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 4N35-M is a through hole general purpose phototransistor optocoupler in 6 pin DIP package. This optocoupler consist of gallium arsenide infrared emitting diode driving a silicon photo transistor. The device is mostly suitable for power supply regulators, digital logic inputs and microprocessor inputs.
- Minimum current transfer ratio of 100% at IF=10A, Vce=10V
- Isolation voltage of 4.17KVAC
- Forward current (If) of 60mA
- Single channel
- UL 1577 and DIN-EN IEC60747-5-5 approved
- Operating temperature range from -40°C to 100°C
Technical Specifications
No. of Channels
1 Channel
No. of Pins
6Pins
Isolation Voltage
7.5kV
Collector Emitter Voltage V(br)ceo
30V
SVHC
No SVHC (27-Jun-2024)
Optocoupler Case Style
DIP
Forward Current If Max
60mA
CTR Min
100%
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85414900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000943