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BC337-25ZL1G.
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 800 mA, 625 mW, TO-92, Through Hole
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoBC337-25ZL1G.
Order Code9558497
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max45V
Continuous Collector Current800mA
Power Dissipation625mW
Transistor Case StyleTO-92
Transistor MountingThrough Hole
No. of Pins3Pins
DC Current Gain hFE Min160hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for BC337-25ZL1G.
1 Product Found
Product Overview
The BC337-25ZL1G is a NPN silicon Amplifier Transistor is designed for use in linear and switching applications.
- 200°C/W Junction-to-ambient thermal resistance
- 83.3°C/W Junction-to-case thermal resistance
Applications
Audio, Industrial
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
800mA
Transistor Case Style
TO-92
No. of Pins
3Pins
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage Max
45V
Power Dissipation
625mW
Transistor Mounting
Through Hole
DC Current Gain hFE Min
160hFE
Product Range
-
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000436