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| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$4.070 (S$4.4363) |
| 50+ | S$2.840 (S$3.0956) |
| 100+ | S$1.650 (S$1.7985) |
| 500+ | S$1.640 (S$1.7876) |
| 1000+ | S$1.630 (S$1.7767) |
Product Information
Product Overview
The FCD7N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 23nC)
- Low effective output capacitance (Coss.eff = 60pF)
- 100% avalanche tested
Applications
Industrial, Power Management, Communications & Networking, Lighting, Alternative Energy, Imaging, Video & Vision
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
7A
TO-252 (DPAK)
10V
83W
150°C
-
Lead (25-Jun-2025)
600V
0.6ohm
Surface Mount
5V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for FCD7N60TM
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Associated Products
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate