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Quantity | Price (inc GST) |
---|---|
1+ | S$0.891 (S$0.9712) |
10+ | S$0.562 (S$0.6126) |
100+ | S$0.401 (S$0.4371) |
500+ | S$0.356 (S$0.388) |
1000+ | S$0.336 (S$0.3662) |
5000+ | S$0.308 (S$0.3357) |
Product Information
Product Overview
The FDC6310P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and battery protected applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
P Channel
20V
2.2A
0.1ohm
6Pins
960mW
-
MSL 1 - Unlimited
20V
2.2A
0.1ohm
SOT-23
960mW
150°C
-
No SVHC (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate