Print Page
Image is for illustrative purposes only. Please refer to product description.
53,210 In Stock
Need more?
7601 Next business day delivery available(SG stock)
45609 Delivery in 3-4 Business Days(UK stock)
Quantity | Price (inc GST) |
---|---|
5+ | S$0.730 (S$0.7957) |
10+ | S$0.650 (S$0.7085) |
100+ | S$0.562 (S$0.6126) |
500+ | S$0.400 (S$0.436) |
1000+ | S$0.380 (S$0.4142) |
2500+ | S$0.360 (S$0.3924) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
S$3.65 (S$3.98 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC638P
Order Code9846433
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.5A
Drain Source On State Resistance0.039ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage12V
Gate Source Threshold Voltage Max800mV
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC638P is a 2.5V specified P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for battery power, load switching, battery charging circuits and DC-to-DC conversion applications.
- High performance Trench technology for extremely low RDS (ON)
- 10nC typical low gate charge
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4.5A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
12V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.039ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
800mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for FDC638P
4 Products Found
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536