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FDG6316P
Dual MOSFET, P Channel, 12 V, 700 mA
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG6316P
Order Code1611649RL
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds12V
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id700mA
Drain Source Voltage Vds P Channel12V
Continuous Drain Current Id N Channel-
On Resistance Rds(on)0.221ohm
Continuous Drain Current Id P Channel700mA
Drain Source On State Resistance N Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.221ohm
Rds(on) Test Voltage4.5V
Transistor Case StyleSC-70
Gate Source Threshold Voltage Max600mV
Power Dissipation Pd300mW
No. of Pins6Pins
Power Dissipation N Channel-
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Product Overview
The FDG6316P is a dual P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery management and load switch applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- Compact industry standard surface-mount-package
- ±8V Gate to source voltage
- -0.7A Continuous drain current
- -1.8A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
12V
Continuous Drain Current Id
700mA
Continuous Drain Current Id N Channel
-
Continuous Drain Current Id P Channel
700mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
600mV
No. of Pins
6Pins
Power Dissipation P Channel
300mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (23-Jan-2024)
Transistor Polarity
P Channel
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
12V
On Resistance Rds(on)
0.221ohm
Drain Source On State Resistance N Channel
-
Drain Source On State Resistance P Channel
0.221ohm
Transistor Case Style
SC-70
Power Dissipation Pd
300mW
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000045