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FDG6321C
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 500 mA, 500 mA, 0.45 ohm
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG6321C
Order Code1700689RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds25V
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id500mA
Continuous Drain Current Id N Channel500mA
On Resistance Rds(on)0.45ohm
Continuous Drain Current Id P Channel500mA
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max800mV
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation Pd300mW
Power Dissipation N Channel300mW
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
Product Overview
The FDG6321C is a dual N/P-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
- Very small package outline
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <lt/>1.5V)
- Gate-source Zener for ESD ruggedness
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id N Channel
500mA
Continuous Drain Current Id P Channel
500mA
Rds(on) Test Voltage
4.5V
Transistor Case Style
SC-70
Power Dissipation Pd
300mW
Power Dissipation P Channel
300mW
Product Range
-
Automotive Qualification Standard
-
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
25V
Continuous Drain Current Id
500mA
On Resistance Rds(on)
0.45ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
800mV
No. of Pins
6Pins
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002