Print Page
FDG6335N
Dual MOSFET, N Channel, 20 V, 20 V, 700 mA, 700 mA, 0.18 ohm
Image is for illustrative purposes only. Please refer to product description.
6,995 In Stock
3,000 more incoming. You can reserve stock now
6995 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$0.518 (S$0.5646) |
| 500+ | S$0.398 (S$0.4338) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
S$51.80 (S$56.46 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG6335N
Order Code2453408RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id700mA
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.18ohm
Continuous Drain Current Id N Channel700mA
Continuous Drain Current Id P Channel700mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.18ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.18ohm
Transistor Case StyleSC-70
Gate Source Threshold Voltage Max1.1V
No. of Pins6Pins
Power Dissipation Pd300mW
Power Dissipation N Channel300mW
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDG6335N is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS (ON) and gate charge (QG) in a small package. It is suitable for use with DC-to-DC converters and load switch applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- Compact industry standard surface-mount-package
- ±12V Gate to source voltage
- 0.7A Continuous drain current
- 2.1A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
700mA
On Resistance Rds(on)
0.18ohm
Continuous Drain Current Id P Channel
700mA
Drain Source On State Resistance N Channel
0.18ohm
Drain Source On State Resistance P Channel
0.18ohm
Gate Source Threshold Voltage Max
1.1V
Power Dissipation Pd
300mW
Power Dissipation P Channel
300mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
700mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SC-70
No. of Pins
6Pins
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000097