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ONSEMI FDPF3860T

Power MOSFET, N Channel, 100 V, 20 A, 0.0291 ohm, TO-220F, Through Hole

ONSEMI FDPF3860T
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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
FDPF3860T
Order Code:
2322605
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Technical Datasheet:
FDPF3860T   Datasheet
ECAD / MCAD
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Product Overview

The FDPF3860T is a 100V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
  • Low gate charge
  • High performance trench technology for extremely low RDS (on)
  • High power and current handing capability

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
N Channel

:
100V

:
20A

:
0.0291ohm

:
TO-220F

:
Through Hole

:
10V

:
2.5V

:
33.8W

:
3Pins

:
150°C

:
-

:
-

:
-

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Technical Documents (2)

Available for back order

More stock available to supplier lead times which is approximately 12/2/24

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

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