Notify me when back in stock
Quantity | Price (inc GST) |
---|---|
2500+ | S$0.388 (S$0.4229) |
7500+ | S$0.381 (S$0.4153) |
20000+ | S$0.373 (S$0.4066) |
37500+ | S$0.367 (S$0.400) |
Product Information
Product Overview
The FDS6690A is a 30V N-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- High performance trench technology for extremely low RDS (on)
- High power and current handling capability
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
11A
SOIC
10V
2.5W
150°C
-
No SVHC (27-Jun-2024)
30V
0.0125ohm
Surface Mount
1.9V
8Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for FDS6690A
8 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate