Print Page

Image is for illustrative purposes only. Please refer to product description.
7,853 In Stock
Need more?
757 Next business day delivery available(SG stock)
7096 Delivery in 3-4 Business Days(UK stock)
Quantity | Price (inc GST) |
---|---|
5+ | S$1.720 (S$1.8748) |
10+ | S$1.080 (S$1.1772) |
100+ | S$0.723 (S$0.7881) |
500+ | S$0.566 (S$0.6169) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
S$8.60 (S$9.37 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6912A
Order Code1095019
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.019ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Product Overview
The FDS6912A is a 30V Dual N-channel logic level PowerTrench® MOSFET produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. This product is general usage and suitable for many different applications.
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±20V gate source voltage (VGSS)
- 78°C/W thermal resistance, junction to ambient
- 40°C/W Thermal resistance, junction to case
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
6A
Drain Source On State Resistance N Channel
0.019ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (2)
Alternatives for FDS6912A
2 Products Found
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000223