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FDS6990A
Dual MOSFET, N Channel, 30 V, 7.5 A, 0.011 ohm
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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6990A
Order Code9845291RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id7.5A
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel7.5A
On Resistance Rds(on)0.011ohm
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.011ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.9V
No. of Pins8Pins
Power Dissipation Pd1.6W
Power Dissipation N Channel1.6W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (19-Jan-2021)
Product Overview
The FDS6990A is a dual N-channel logic level MOSFET produced using advanced PowerTrench process. It is especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Fast switching speed
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±20V Gate to source voltage
- 7.5A Continuous drain current
- 20A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
7.5A
Continuous Drain Current Id N Channel
7.5A
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.011ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1.9V
Power Dissipation Pd
1.6W
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (19-Jan-2021)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.011ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000246