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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS8447
Order Code1495221
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id12.8A
Drain Source On State Resistance0.009ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation2.5mW
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDS8447 is a single N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handing capability
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
12.8A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.009ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000224