Print Page
FDV304P
Power MOSFET, P Channel, 25 V, 460 mA, 1.1 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
9,000 In Stock
15,000 more incoming. You can reserve stock now
9000 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | S$0.167 (S$0.182) |
| 9000+ | S$0.146 (S$0.1591) |
| 24000+ | S$0.121 (S$0.1319) |
| 45000+ | S$0.108 (S$0.1177) |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
S$501.00 (S$546.09 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDV304P
Order Code2438464
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id460mA
Drain Source On State Resistance1.1ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max860mV
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDV304P is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process is tailored to minimize ON-state resistance at low gate drive conditions. It is designed especially for application in battery power applications. It has excellent ON-state resistance even at gate drive voltages as low as 2.5V.
- Very low level gate drive requirements allowing direct operation
- Gate-source zener for ESD ruggedness, <gt/>6kV human body mode
- Compact industry standard surface-mount package
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
460mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
350mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
1.1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
860mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for FDV304P
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001