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FQT1N80TF-WS
Power MOSFET, N Channel, 800 V, 200 mA, 15.5 ohm, SOT-223, Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$1.280 (S$1.3952) |
| 10+ | S$1.040 (S$1.1336) |
| 100+ | S$0.810 (S$0.8829) |
| 500+ | S$0.685 (S$0.7466) |
| 1000+ | S$0.543 (S$0.5919) |
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S$1.28 (S$1.40 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQT1N80TF-WS
Order Code2453913
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id200mA
Drain Source On State Resistance15.5ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation2.1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The FQT1N80TF_WS is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (5.5nC)
- Low Crss (2.7pF)
- 100% avalanche tested
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
200mA
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
2.1W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
800V
Drain Source On State Resistance
15.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000188