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Quantity | Price (inc GST) |
---|---|
100+ | S$9.120 (S$9.9408) |
500+ | S$8.750 (S$9.5375) |
800+ | S$8.370 (S$9.1233) |
1600+ | S$8.210 (S$8.9489) |
2400+ | S$8.040 (S$8.7636) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
S$912.00 (S$994.08 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoHGT1S10N120BNST
Order Code2454176RL
Technical Datasheet
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Product Range-
Product Overview
The HGT1S10N120BNST is a N-channel Non-punch Through (NPT) IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS and solar inverter. It is new member of the MOS gated high voltage switching IGBT family. It combines the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor.
- Short-circuit rating
- Avalanche rated
- 2.45V @ IC = 10A Low saturation voltage
- 140ns Fall time @ TJ = 150°C
- 298W Total power dissipation @ TC = 25°C
Applications
Power Management, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Case Style
TO-263AB
Product Range
-
Transistor Mounting
Surface Mount
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001312