HGTG20N60A4D
IGBT, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 Pins
Product Information
Product Overview
The HGTG20N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
- 55ns at TJ = 125°C Fall time
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
70A
290W
TO-247
150°C
-
2.7V
600V
3Pins
Through Hole
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate