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| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 1 | S$0.635 | S$0.64 |
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$0.635 (S$0.6922) |
| 10+ | S$0.449 (S$0.4894) |
| 100+ | S$0.348 (S$0.3793) |
| 500+ | S$0.324 (S$0.3532) |
| 1000+ | S$0.317 (S$0.3455) |
| 2500+ | S$0.312 (S$0.3401) |
| 5000+ | S$0.305 (S$0.3324) |
Product Information
Product Overview
The MC33172DR2G is a low power monolithic dual Operational Amplifier operates at 180μA per amplifier and offer 1.8MHz of gain bandwidth product and 2.1V/μs slew rate without the use of JFET device technology. Although this series can be operated from split supplies, it is particularly suited for single supply operation, since the common-mode input voltage includes ground potential (VEE). With a Darlington input stage, this device exhibit high input resistance, low input offset voltage and high gain. The all NPN output stage, characterized by no dead-band crossover distortion and large output voltage swing, provides high capacitance drive capability, excellent phase and gain margins, low open loop high frequency output impedance and symmetrical source/sink AC frequency response.
- Output short-circuit protection
- Wide input common mode range, including ground (VEE)
- 2mV Low input offset voltage
- 0 to 500pF Large capacitance drive capability
- 0.03% Low total harmonic distortion
- 60° Excellent phase margin
- 15dB Excellent gain margin
Applications
Industrial, Automotive
Technical Specifications
2Channels
2.1V/µs
SOIC
Low Power
2mV
Surface Mount
85°C
-
No SVHC (25-Jun-2025)
-
2 Amplifier
1.8MHz
± 1.5V to ± 22V
8Pins
-
20nA
-40°C
-
-
SOIC
1.8MHz
2.1V/µs
Technical Docs (3)
Alternatives for MC33172DR2G
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate
