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MJ11028G
Darlington Transistor, NPN, 60 V, 300 W, 50 A, TO-204, 2 Pins
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| Quantity | Price (inc GST) |
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| 1+ | S$18.820 (S$20.5138) |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ11028G
Order Code2845302
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo60V
Power Dissipation Pd300W
DC Collector Current50A
RF Transistor CaseTO-204
No. of Pins2Pins
DC Current Gain hFE18hFE
Transistor MountingThrough Hole
Operating Temperature Max200°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The MJ11028G is an NPN Complementary Silicon Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications. This transistor features monolithic construction with built-in base-emitter shunt resistor.
- High DC current gain
- Diode protection to rated IC
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
300W
RF Transistor Case
TO-204
DC Current Gain hFE
18hFE
Operating Temperature Max
200°C
Qualification
-
Collector Emitter Voltage V(br)ceo
60V
DC Collector Current
50A
No. of Pins
2Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.014991