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Quantity | Price (inc GST) |
---|---|
5+ | S$1.360 (S$1.4824) |
10+ | S$1.020 (S$1.1118) |
100+ | S$0.697 (S$0.7597) |
500+ | S$0.567 (S$0.618) |
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Minimum: 5
Multiple: 5
S$6.80 (S$7.41 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD117T4G
Order Code2845303
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd20W
DC Collector Current2A
RF Transistor CaseTO-252 (DPAK)
No. of Pins4Pins
DC Current Gain hFE200hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
PNP
Power Dissipation Pd
20W
RF Transistor Case
TO-252 (DPAK)
DC Current Gain hFE
200hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
2A
No. of Pins
4Pins
Transistor Mounting
Surface Mount
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Alternatives for MJD117T4G
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426