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MJD200G
TRANSISTOR, RF
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD200G
Order Code1611254
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max25V
Continuous Collector Current5A
Power Dissipation1.4W
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency65MHz
DC Current Gain hFE Min65hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for MJD200G
2 Products Found
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
5A
Transistor Case Style
TO-252 (DPAK)
No. of Pins
3Pins
DC Current Gain hFE Min
65hFE
Product Range
-
Collector Emitter Voltage Max
25V
Power Dissipation
1.4W
Transistor Mounting
Surface Mount
Transition Frequency
65MHz
Operating Temperature Max
150°C
Qualification
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001