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MJE13005G
Bipolar (BJT) Single Transistor, NPN, 400 V, 4 MHz, 2 W, 4 A, 4
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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE13005G
Order Code9557849
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max400V
Continuous Collector Current4A
Power Dissipation2W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
DC Current Gain hFE Min4hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for MJE13005G
4 Products Found
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
4A
Transistor Case Style
TO-220
No. of Pins
3Pins
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage Max
400V
Power Dissipation
2W
Transistor Mounting
Through Hole
DC Current Gain hFE Min
4hFE
Product Range
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002