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MMUN2233LT1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm
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42,000 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 3000+ | S$0.029 (S$0.0316) |
| 9000+ | S$0.028 (S$0.0305) |
| 24000+ | S$0.027 (S$0.0294) |
| 45000+ | S$0.026 (S$0.0283) |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
S$87.00 (S$94.83 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMUN2233LT1G
Order Code2317870
Technical Datasheet
Transistor PolaritySingle NPN
Digital Transistor PolaritySingle NPN
Collector Emitter Voltage V(br)ceo50V
Collector Emitter Voltage Max NPN50V
Continuous Collector Current Ic100mA
Collector Emitter Voltage Max PNP-
Continuous Collector Current100mA
Base Input Resistor R14.7kohm
Base Emitter Resistor R247kohm
Resistor Ratio, R1 / R20.1(Ratio)
Transistor Case StyleSOT-23
RF Transistor CaseSOT-23
No. of Pins3 Pin
Transistor MountingSurface Mount
Power Dissipation400mW
Operating Temperature Max150°C
DC Current Gain hFE Min80hFE
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
MMUN2233LT1G is an MMUN2233L series NPN transistor with a monolithic bias resistor network digital transistor. It is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
- Simplifies circuit design, reduces board space, reduces component count
- Collector-base voltage is 50VDC max (TA = 25°C, common for Q1 and Q2)
- Collector-emitter voltage is 50VDC max (TA = 25°C, common for Q1 and Q2)
- Collector current - continuous is 100mAdc max (TA = 25°C, common for Q1 and Q2)
- Input forward voltage is 30VDC max (TA = 25°C, common for Q1 and Q2)
- Input reverse voltage is 5VDC max (TA = 25°C, common for Q1 and Q2)
- Total device dissipation is 230mW max (TA = 25°C)
- DC current gain is 200 (IC = 5.0mA, VCE = 10V, TA = 25°C)
- Input resistor range from 3.3 to 6.1kohm (TA = 25°C, common for Q1 and Q2)
- SOT-23 package, junction temperature range from -55 to +150°C
Technical Specifications
Transistor Polarity
Single NPN
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Continuous Collector Current
100mA
Base Emitter Resistor R2
47kohm
Transistor Case Style
SOT-23
No. of Pins
3 Pin
Power Dissipation
400mW
DC Current Gain hFE Min
80hFE
Qualification
-
MSL
MSL 1 - Unlimited
Digital Transistor Polarity
Single NPN
Collector Emitter Voltage Max NPN
50V
Collector Emitter Voltage Max PNP
-
Base Input Resistor R1
4.7kohm
Resistor Ratio, R1 / R2
0.1(Ratio)
RF Transistor Case
SOT-23
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033