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NTHL095N65S3H
Power MOSFET, N Channel, 650 V, 30 A, 0.077 ohm, TO-247, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoNTHL095N65S3H
Order Code3677721
Product RangeSUPERFET III
Technical Datasheet
114 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$7.470 (S$8.1423) |
| 5+ | S$6.690 (S$7.2921) |
| 10+ | S$5.900 (S$6.431) |
| 50+ | S$5.760 (S$6.2784) |
| 100+ | S$5.620 (S$6.1258) |
| 250+ | S$5.520 (S$6.0168) |
Price for:Each
Minimum: 1
Multiple: 1
S$7.47 (S$8.14 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTHL095N65S3H
Order Code3677721
Product RangeSUPERFET III
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id30A
Drain Source On State Resistance0.077ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation208W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSUPERFET III
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
208W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.077ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
SUPERFET III
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003