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NTMC083NP10M5L
Dual MOSFET, N and P Channel, 100 V, 100 V, 4.1 A, 4.1 A, 0.0594 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTMC083NP10M5LCopy
Manufacturer Standard Lead Time22 weeks
Order Code
Re-Reel3787297RL
Cut Tape3787297
Your Part Number
10,903 In Stock
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10,903 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 5 | S$0.774 | S$3.87 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$0.774 (S$0.8437) |
| 50+ | S$0.724 (S$0.7892) |
| 100+ | S$0.675 (S$0.7358) |
| 500+ | S$0.633 (S$0.690) |
| 1000+ | S$0.600 (S$0.654) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMC083NP10M5LCopy
Manufacturer Standard Lead Time22 weeks
Order Code
Re-Reel3787297RL
Cut Tape3787297
Technical Datasheet
Channel TypeN and P Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id N Channel4.1A
Continuous Drain Current Id P Channel4.1A
Drain Source On State Resistance N Channel0.0594ohm
Drain Source On State Resistance P Channel0.0594ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
Power, dual N- and P-channel (100V, 83mohm, 4.5A, -100V, 131ohm, -3.6A) MOSFET is typically used in power tools, battery operated vacuums, UAV/drones, material handling, motor drive and home automation applications.
- Small footprint (5 x 6mm) for compact design
- Low RDS(on) to minimize conduction losses
- Low QG and capacitance to minimize driver losses
- Not ESD protected
- Low conduction loss, standard footprint
Technical Specifications
Channel Type
N and P Channel
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id P Channel
4.1A
Drain Source On State Resistance P Channel
0.0594ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id N Channel
4.1A
Drain Source On State Resistance N Channel
0.0594ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001