RFD3055LESM9A
Power MOSFET, N Channel, 60 V, 11 A, 0.107 ohm, TO-252AA, Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$0.814 (S$0.8873) |
| 10+ | S$0.575 (S$0.6268) |
| 100+ | S$0.518 (S$0.5646) |
| 500+ | S$0.471 (S$0.5134) |
| 1000+ | S$0.461 (S$0.5025) |
| 5000+ | S$0.411 (S$0.448) |
Product Information
Product Overview
The RFD3055LESM9A is a N-channel enhancement-mode Power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. It can be operated directly from integrated circuits.
- Temperature compensating PSPICE® model
- Peak current vs. pulse width curve
- UIS Rating curve
Applications
Power Management, Motor Drive & Control, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
11A
TO-252AA
5V
38W
175°C
-
Lead (27-Jun-2024)
60V
0.107ohm
Surface Mount
3V
3Pins
-
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate