FDC6306P
Dual MOSFET, P Channel, 20 V, 1.9 A
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$1.220 (S$1.3298) |
| 10+ | S$0.788 (S$0.8589) |
| 100+ | S$0.522 (S$0.569) |
| 500+ | S$0.391 (S$0.4262) |
| 1000+ | S$0.354 (S$0.3859) |
| 5000+ | S$0.330 (S$0.3597) |
Product Information
Product Overview
The FDC6306P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and battery protected applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
P Channel
20V
1.9A
0.17ohm
6Pins
960mW
PowerTrench Series
MSL 1 - Unlimited
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-
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SuperSOT
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150°C
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No SVHC (27-Jun-2024)
Technical Docs (3)
Alternatives for FDC6306P
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Associated Products
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate