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FDC6321C
Dual MOSFET, N and P Channel, 25 V, 25 V, 680 mA, 460 mA, 0.45 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC6321CCopy
Manufacturer Standard Lead Time15 weeks
Order Code
Full Reel2438427
Re-Reel9844848RL
Cut Tape9844848
Your Part Number
23,986 In Stock
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10,230 Next business day delivery available(SG stock)
13,756 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 5 | S$0.883 | S$4.42 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$0.883 (S$0.9625) |
| 50+ | S$0.728 (S$0.7935) |
| 100+ | S$0.572 (S$0.6235) |
| 500+ | S$0.441 (S$0.4807) |
| 1500+ | S$0.432 (S$0.4709) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | S$0.423 (S$0.4611) |
| 9000+ | S$0.415 (S$0.4524) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6321CCopy
Manufacturer Standard Lead Time15 weeks
Order Code
Full Reel2438427
Re-Reel9844848RL
Cut Tape9844848
Technical Datasheet
Channel TypeN and P Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id N Channel680mA
Continuous Drain Current Id P Channel460mA
Drain Source On State Resistance N Channel0.45ohm
Drain Source On State Resistance P Channel1.1ohm
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel900mW
Power Dissipation P Channel900mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDC6321C is a dual N/P-channel Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N and P Channel
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id P Channel
460mA
Drain Source On State Resistance P Channel
1.1ohm
No. of Pins
6Pins
Power Dissipation P Channel
900mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id N Channel
680mA
Drain Source On State Resistance N Channel
0.45ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for FDC6321C
3 Products Found
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000113