FDG6332C
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 700 mA, 700 mA, 0.18 ohm
Product Information
Alternatives for FDG6332C
2 Products Found
Product Overview
The FDG6332C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive and packages are impractical. It is suitable for use with DC-to-DC converters, load switch and LCD display inverter applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Complementary N and P Channel
20V
700mA
0.18ohm
6Pins
300mW
-
MSL 1 - Unlimited
20V
700mA
0.18ohm
SC-70
300mW
150°C
-
No SVHC (23-Jan-2024)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate