Print Page
FDMD85100
Dual MOSFET, N Channel, 100 V, 48 A, 0.0099 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDMD85100
Order Code3003996RL
Product RangePowerTrench Series
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMD85100
Order Code3003996RL
Product RangePowerTrench Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds100V
Continuous Drain Current Id48A
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel48A
On Resistance Rds(on)0.0078ohm
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.0099ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleQFN
Gate Source Threshold Voltage Max3.1V
No. of Pins8Pins
Power Dissipation Pd50W
Power Dissipation N Channel50W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangePowerTrench Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCLead (19-Jan-2021)
Product Overview
FDMD85100 is a dual N-channel PowerTrench® MOSFET. This device includes two N-channel MOSFETs in a dual power (5mm x 6mm) packages. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. Typical applications include synchronous buck, primary switch of half/ full bridge converter for telecom, motor bridge, primary switch of half/full bridge converter for BLDC motor, MV POL, 48L synchronous buck switch and half/full bridge secondary synchronous rectification.
- Max rDS(on) = 9.9mohm at VGS=10V, Id=10.4A at Q1: N-channel
- Max rDS(on) = 16.4mohm at VGS=6V, Id = 8A at Q1: N-channel
- Max rDS(on) = 9.9mohm at VGS=10V, Id = 10.4A at Q2: N-channel
- Max rDS(on) = 16.4mohm at VGS = 6V, Id = 8A at Q2: N-channel
- Ideal for flexible layout in primary side of bridge topology
- Kelvin high side MOSFET drive pin out capability
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id
48A
Continuous Drain Current Id N Channel
48A
Continuous Drain Current Id P Channel
-
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
3.1V
Power Dissipation Pd
50W
Power Dissipation P Channel
-
Product Range
PowerTrench Series
Automotive Qualification Standard
-
SVHC
Lead (19-Jan-2021)
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.0078ohm
Drain Source On State Resistance N Channel
0.0099ohm
Rds(on) Test Voltage
10V
Transistor Case Style
QFN
No. of Pins
8Pins
Power Dissipation N Channel
50W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85413000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005