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FDMD8560L
Dual MOSFET, PowerTrench, N Channel, 60 V, 93 A, 0.0025 ohm
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ManufacturerONSEMI
Manufacturer Part NoFDMD8560L
Order Code2610668RL
Product RangePowerTrench Series
Technical Datasheet
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$3.470 (S$3.7823) |
| 500+ | S$3.190 (S$3.4771) |
| 3000+ | S$2.920 (S$3.1828) |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
S$347.00 (S$378.23 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMD8560L
Order Code2610668RL
Product RangePowerTrench Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id93A
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.0025ohm
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Transistor Case StylePQFN
Gate Source Threshold Voltage Max1.6V
Power Dissipation Pd48W
Power Dissipation P Channel-
Product RangePowerTrench Series
Qualification-
Automotive Qualification Standard-
Product Overview
FDMD8560L is a dual N-channel PowerTrench® MOSFET. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. Application includes synchronous buck primary switch of half / full bridge converter for telecom, motor bridge primary switch of half / full bridge converter for BLDC motor, MV POL 48V synchronous buck switch, and half/full bridge secondary synchronous rectification.
- Ideal for flexible layout in primary side of bridge topology
- 100% UIL tested, kelvin high side MOSFET drive Pin-out capability
- Static drain to source on resistance is 2.5mohm (typ, VGS = 10V, ID = 22A, Q1)
- Drain to source voltage is 60V (Q1, Q2, typ, TA = 25°C)
- Gate to source threshold voltage is 1.0V (typ, Q1, Q2, VGS = VDS, ID = 250µA)
- Power dissipation is 48W (typ, Q1, Q2, TC = 25°C)
- Rise time is 15ns (typ, Q1, Q2, VDD = 30V, ID = 22A, VGS = 10V, RGEN = 6ohm)
- Reverse recovery time is 53ns (Q1, Q2, IF = 22A, di/dt = 100A/μs, typ)
- Operating and storage junction temperature range from -55 to +150°C, power 5 x 6 package
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.6V
Power Dissipation P Channel
-
Qualification
-
Channel Type
N Channel
Continuous Drain Current Id
93A
On Resistance Rds(on)
0.0025ohm
Transistor Mounting
Surface Mount
Transistor Case Style
PQFN
Power Dissipation Pd
48W
Product Range
PowerTrench Series
Automotive Qualification Standard
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000254