Print Page
FDS8935
Dual MOSFET, P Channel, 80 V, 80 V, 2.1 A, 2.1 A, 0.148 ohm
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS8935
Order Code2083351RL
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds N Channel80V
Drain Source Voltage Vds80V
Drain Source Voltage Vds P Channel80V
Continuous Drain Current Id2.1A
Continuous Drain Current Id N Channel2.1A
On Resistance Rds(on)0.148ohm
Continuous Drain Current Id P Channel2.1A
Drain Source On State Resistance N Channel0.148ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.148ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.8V
Power Dissipation Pd3.1W
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Jan-2022)
Product Overview
The FDS8935 is a dual P-channel MOSFET produced using advanced PowerTrench® process. It is optimized for RDS (ON), switching performance and ruggedness. The device is suitable for use with load switch and synchronous rectifier applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- ±20V Gate to source voltage
- -2.1A Continuous drain current
- -10A Pulsed drain current
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
80V
Drain Source Voltage Vds P Channel
80V
Continuous Drain Current Id N Channel
2.1A
Continuous Drain Current Id P Channel
2.1A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (17-Jan-2022)
Transistor Polarity
P Channel
Drain Source Voltage Vds
80V
Continuous Drain Current Id
2.1A
On Resistance Rds(on)
0.148ohm
Drain Source On State Resistance N Channel
0.148ohm
Drain Source On State Resistance P Channel
0.148ohm
Transistor Case Style
SOIC
Power Dissipation Pd
3.1W
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000117