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FDS8984
Dual MOSFET, N Channel, 30 V, 30 V, 7 A, 7 A, 0.019 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$0.628 (S$0.6845) |
| 500+ | S$0.500 (S$0.545) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
S$62.80 (S$68.45 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS8984
Order Code2464131RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id7A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.019ohm
Continuous Drain Current Id N Channel7A
Continuous Drain Current Id P Channel7A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.019ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.019ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.7V
No. of Pins8Pins
Power Dissipation Pd1.6W
Power Dissipation N Channel1.6W
Power Dissipation P Channel1.6W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDS8984 is a dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
- Low gate charge
- ±20V Gate to source voltage
- 7A Continuous drain current
- 30A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
7A
On Resistance Rds(on)
0.019ohm
Continuous Drain Current Id P Channel
7A
Drain Source On State Resistance N Channel
0.019ohm
Drain Source On State Resistance P Channel
0.019ohm
Gate Source Threshold Voltage Max
1.7V
Power Dissipation Pd
1.6W
Power Dissipation P Channel
1.6W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
7A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000259