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Product Information
ManufacturerONSEMI
Manufacturer Part NoFFPF08S60SNTUCopy
Order Code2083375
Product RangeFFPF0
Technical Datasheet
Repetitive Peak Reverse Voltage600V
Average Forward Current8A
Diode ConfigurationSingle
Forward Voltage Max3.4V
Forward Surge Current60A
Operating Temperature Max150°C
Diode Case StyleTO-220F
No. of Pins2 Pin
Product RangeFFPF0
Qualification-
Product Overview
The FFPF08S60SNTU is a STEALTH™ II Diode with soft-recovery characteristics. It comes with silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as free-wheeling of boost diode in switching power supplies and other power switching applications. Their low stored charge and Hyperfast™ soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
- Avalanche energy rated
- High reliability
- 25ns at IF = 8A Stealth recovery (trr)
Applications
Power Management, Industrial
Technical Specifications
Repetitive Peak Reverse Voltage
600V
Diode Configuration
Single
Forward Surge Current
60A
Diode Case Style
TO-220F
Product Range
FFPF0
Average Forward Current
8A
Forward Voltage Max
3.4V
Operating Temperature Max
150°C
No. of Pins
2 Pin
Qualification
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00195