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FQD1N60CTM
Power MOSFET, N Channel, 600 V, 1 A, 9.3 ohm, TO-252 (DPAK), Surface Mount
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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD1N60CTM
Order Code2322627
Technical Datasheet
Channel TypeN Channel
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Product Range-
Qualification-
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Product Overview
The FQD1N60CTM is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (4.8nC)
- Low Crss (3.5pF)
- 100% avalanche tested
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Transistor Mounting
Surface Mount
Qualification
-
Transistor Case Style
TO-252 (DPAK)
Product Range
-
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.01