Print Page
FQT5P10TF
Power MOSFET, P Channel, 100 V, 1 A, 0.82 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 12 week(s)
Notify me when back in stock
| Quantity | Price (inc GST) |
|---|---|
| 4000+ | S$0.381 (S$0.4153) |
| 12000+ | S$0.374 (S$0.4077) |
| 32000+ | S$0.366 (S$0.3989) |
| 60000+ | S$0.359 (S$0.3913) |
Price for:Each (Supplied on Full Reel)
Minimum: 4000
Multiple: 4000
S$1,524.00 (S$1,661.16 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQT5P10TF
Order Code2323209
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1A
Drain Source On State Resistance0.82ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation2W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Product Overview
The FQT5P10TF is a -100V P-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
- Low gate charge (typical 6.3nC)
- Low Crss (typical 18pF)
- 100% avalanche tested
- ±30V gate to source voltage
- 62.5°C/W thermal resistance, junction to ambient
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
1A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.82ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for FQT5P10TF
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000214