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Quantity | Price (inc GST) |
---|---|
3000+ | S$0.070 (S$0.0763) |
9000+ | S$0.067 (S$0.073) |
24000+ | S$0.063 (S$0.0687) |
45000+ | S$0.059 (S$0.0643) |
Product Information
Product Overview
The NDS0605 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. It can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
- Voltage controlled p-channel small signal switch
- High density cell design for low RDS (ON)
- High saturation current
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
P Channel
180mA
SOT-23
10V
360mW
150°C
-
No SVHC (27-Jun-2024)
60V
5ohm
Surface Mount
1.7V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for NDS0605
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate