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NTGD1100LT1G
Dual MOSFET, Complementary N and P Channel, 8 V, 8 V, 0.04 ohm
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTGD1100LT1G
Order Code2630398
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel8V
Drain Source Voltage Vds P Channel8V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.04ohm
Drain Source On State Resistance P Channel0.04ohm
Transistor Case StyleTSOP
No. of Pins6Pins
Power Dissipation N Channel830mW
Power Dissipation P Channel830mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (10-Jun-2022)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
8V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
0.04ohm
No. of Pins
6Pins
Power Dissipation P Channel
830mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
8V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
0.04ohm
Transistor Case Style
TSOP
Power Dissipation N Channel
830mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (10-Jun-2022)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000081