Print Page
NTJD4152PT1G.
P CHANNEL MOSFET, -20V, SOT-363
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTJD4152PT1G.
Order Code1364641
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel880mA
Continuous Drain Current Id P Channel880mA
Drain Source On State Resistance N Channel0.215ohm
Drain Source On State Resistance P Channel0.215ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel272mW
Power Dissipation P Channel272mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (14-Jun-2023)
Alternatives for NTJD4152PT1G.
2 Products Found
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
880mA
Drain Source On State Resistance P Channel
0.215ohm
No. of Pins
6Pins
Power Dissipation P Channel
272mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
880mA
Drain Source On State Resistance N Channel
0.215ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
272mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (14-Jun-2023)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85332900
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (14-Jun-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000046