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NTMFS002P03P8ZT1G
Power MOSFET, P Channel, 30 V, 226 A, 0.0012 ohm, SOIC, Surface Mount
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546 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$2.080 (S$2.2672) |
| 500+ | S$1.720 (S$1.8748) |
| 1500+ | S$1.680 (S$1.8312) |
| 3000+ | S$1.640 (S$1.7876) |
| 4500+ | S$1.590 (S$1.7331) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
S$208.00 (S$226.72 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFS002P03P8ZT1G
Order Code3766208RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id226A
Drain Source On State Resistance0.0012ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation138.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
226A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
138.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0012ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00016