NTMFS10N7D2C
Power MOSFET, N Channel, 100 V, 78 A, 0.0072 ohm, Power 56, Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$5.470 (S$5.9623) |
| 10+ | S$3.910 (S$4.2619) |
| 100+ | S$2.870 (S$3.1283) |
| 500+ | S$2.730 (S$2.9757) |
| 3000+ | S$2.580 (S$2.8122) |
| 6000+ | S$2.430 (S$2.6487) |
| 9000+ | S$2.280 (S$2.4852) |
Product Information
Product Overview
NTMFS10N7D2C is a power trench, N‐channel, shielded gate MOSFET. This N-channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Application includes primary DC−DC MOSFET, synchronous rectifier in DC−DC and AC−DC, motor drive and solar.
- Lowers switching noise/EMI
- 100% UIL tested
- Drain to source voltage is 100V (TA = 25°C)
- 50% lower Qrr than other MOSFET suppliers
- Gate to source voltage is ±20V (TA = 25°C)
- Drain current is 78A (continuous, TC = 25°C)
- Single pulse avalanche energy is 216mJ (TC = 25°C)
- Power dissipation is 83W (TC = 25°C)
- Turn-on delay time is 13ns (typ, VDD = 50V, ID = 28A, VGS = 10V, RGEN = 6ohm,TJ = 25°C)
- PQFN8 package, operating and storage junction temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
78A
Power 56
10V
83W
150°C
-
Lead (27-Jun-2024)
100V
0.0072ohm
Surface Mount
4V
8Pins
PowerTrench Series
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate