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NXH004P120M3F2PNG
Silicon Carbide MOSFET, EliteSiC, 2-PACK, Half Bridge, N Channel, 338 A, 1.2 kV, 0.0055 ohm, PIM
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10 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$299.840 (S$299.840) |
| 5+ | S$279.530 (S$279.530) |
Price for:Each
Minimum: 1
Multiple: 1
S$299.84 (S$299.84 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH004P120M3F2PNG
Order Code4472915
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id338A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0055ohm
Transistor Case StylePIM
No. of Pins36Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation1.098kW
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
338A
Drain Source On State Resistance
0.0055ohm
No. of Pins
36Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
PIM
Rds(on) Test Voltage
18V
Power Dissipation
1.098kW
Product Range
-
Technical Docs (1)
Legislation and Environmental
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate