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NXH006P120M3F2PTHG
Silicon Carbide MOSFET, EliteSiC, 2-PACK, Half Bridge, N Channel, 191 A, 1.2 kV, 0.008 ohm, PIM
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$203.350 (S$203.350) |
| 5+ | S$196.890 (S$196.890) |
| 10+ | S$190.430 (S$190.430) |
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S$203.35 (S$203.35 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH006P120M3F2PTHG
Order Code4472916
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id191A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.008ohm
Transistor Case StylePIM
No. of Pins36Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation556W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
191A
Drain Source On State Resistance
0.008ohm
No. of Pins
36Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
PIM
Rds(on) Test Voltage
18V
Power Dissipation
556W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001