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NXH010P90MNF1PTG
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 154 A, 900 V, 0.01003 ohm, Module
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$178.520 (S$194.5868) |
| 5+ | S$177.580 (S$193.5622) |
| 10+ | S$176.630 (S$192.5267) |
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S$178.52 (S$194.59 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH010P90MNF1PTG
Order Code3973631
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id154A
Drain Source Voltage Vds900V
Drain Source On State Resistance0.01003ohm
No. of Pins18Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.74V
Power Dissipation328W
Operating Temperature Max175°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
154A
Drain Source On State Resistance
0.01003ohm
Rds(on) Test Voltage
15V
Power Dissipation
328W
Product Range
-
Channel Type
Dual N Channel
Drain Source Voltage Vds
900V
No. of Pins
18Pins
Gate Source Threshold Voltage Max
2.74V
Operating Temperature Max
175°C
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.09